STB36NM60N datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STB36NM60N

功能描述	Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

DocID16099 Rev 5

5/15

STB36NM60N

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 14.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14)

-17

Rise time

td(off)

Turn-off-delay time

106

Fall time

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

116

VSD

(2)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 29 A, VGS = 0

1.6

trr

Reverse recovery time

ISD = 29 A, di/dt = 100 A/µs

VDD= 60 V (see Figure 19)

-408

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 29 A, di/dt = 100 A/µs

VDD= 60 V Tj = 150 °C

(see Figure 19)

-480

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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