Electrical characteristics

STB36NM60N

4/15

DocID16099 Rev 5

2

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

10

µA

VDS = 600 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 14.5 A

0.093

0.105

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

2722

173

1.75

-

pF

pF

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent Output

capacitance

VGS = 0, VDS = 0 to 480 V

-

458

-

pF

Rg

Gate input resistance

f =1MHz Gate DC Bias=0

Test signal level = 20 mV

open drain

-2.9

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 29 A,

VGS = 10 V

(see Figure 15)

-

83.6

14

45

-

nC

nC

nC