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STB36NM60N 数据表(PDF) 7 Page - STMicroelectronics |
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STB36NM60N 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() DocID16099 Rev 5 7/15 STB36NM60N Electrical characteristics 15 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized V(BR)DSS vs temperature Figure 13. Source-drain diode forward characteristics C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM09024v1 Eoss 1 2 0 0 100 VDS(V) (µJ) 400 200 300 500 AM09025v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM09026v1 RDS(on) 1.1 0.9 0.7 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 1.3 1.5 1.7 1.9 2.1 ID=14.5A AM09027v1 V(BR)DSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM00897v1 VSD 0 10 ISD(A) (V) 5 25 15 20 0.4 0.6 0.8 1.0 TJ=-50°C TJ=150°C TJ=25°C 1.2 1.4 1.6 AM09039v1 |
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