STM8AFSLASHP6346 datasheet(62/95 Pages) STMICROELECTRONICS

62 / 95 page

Electrical characteristics

STM8AF6366

62/95

DS12343 Rev 2

10.3.5

Memory characteristics

Flash program memory/data EEPROM memory

General conditions: TA = -40 to 150 °C.

Table 32. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU is 0 to 16 MHz

with 0 ws

3.0

5.5

VDD

Operating voltage

(code execution)

fCPU is 0 to 16 MHz

with 0 ws

2.6

5.5

tprog

Standard programming time (including

erase) for byte/word/block

(1 byte/4 bytes/128 bytes)

6.6

Fast programming time for 1 block

(128 bytes)

3.3

terase

Erase time for 1 block (128 bytes)

3.3

Table 33. Flash program memory

Symbol

Parameter

Condition

Min

Max

Unit

TWE

Temperature for writing and erasing

-40

150

°C

NWE

Flash program memory endurance

(erase/write cycles)(1)

1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a

write/erase operation addresses a single byte.

TA = 25 °C

1000

cycles

tRET

Data retention time

TA = 25 °C

years

TA = 55 °C

Table 34. Data memory

Symbol

Parameter

Condition

Min

Max

Unit

TWE

Temperature for writing and erasing

-40

150

°C

NWE

Data memory endurance(1)

(erase/write cycles)

1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a

write/erase operation addresses a single byte.

TA = 25 °C

300 k

cycles

TA = -40°C to 125 °C

100 k(2)

2. More information on the relationship between data retention time and number of write/erase cycles is

available in a separate technical document.

tRET

Data retention time

TA = 25 °C

40(2)(3)

3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.

years

TA = 55 °C

20(2)(3)

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