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STM8AF/P6369 数据表(PDF) 72 Page - STMicroelectronics

部件名 STM8AF/P6369
功能描述  Automotive 8-bit MCU, with up to 128-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, USART, SPI, I2C, 3 to 5.5 V
PDF  116 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AF/P6369 数据表(HTML) 72 Page - STMicroelectronics

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Electrical characteristics
STM8AF6388
72/116
DocID031156 Rev 1
10.3.5
Memory characteristics
Flash program memory/data EEPROM memory
General conditions: TA = -40 °C to 150 °C.
Table 33. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU is 16 to 24 MHz
with 1 ws
fCPU is 0 to 16 MHz
with 0 ws
3.0
-
5.5
V
VDD
Operating voltage (code execution)
fCPU is 16 to 24 MHz
with 1 ws
fCPU is 0 to 16 MHz
with 0 ws
2.6
-
5.5
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
--
6
6.6
ms
Fast programming time for 1 block
(128 bytes)
--
3
3.3
terase
Erase time for 1 block (128 bytes)
-
-
3
3.3
Table 34. Flash program memory
Symbol
Parameter
Condition
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
150
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
TA = 25 °C
1000
-
cycles
tRET
Data retention time
TA = 25 °C
40
-
years
TA = 55 °C
20
-



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