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VIPERGAN50 数据表(PDF) 7 Page - STMicroelectronics

部件名 VIPERGAN50
功能描述  Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT
PDF  37 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

VIPERGAN50 数据表(HTML) 7 Page - STMicroelectronics

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Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
TDD-CL
Shutdown clamping
delay
100
µs
Supply current
IQ
Quiescent current
Burst-mode operation
900
µA
IDD
Operating supply
current
TB=GND; FSW = 100 kHz
Including DRV supply current, VFB = 0.9 V
3
mA
IDD-FAULT
Fault quiescent
current
VDD > VDD-OFF
620
µA
Current limitation
IDLIM
Drain current
limitation
VFB = 3.1 V
2.137
2.25
2.362
A
IOCP_LEB
OCP_LEB current
threshold
1.9
A
IBM
Bust-mode current
VFB = 0.7 V
514
563
612
mA
TSS
Soft-start time
8
ms
TD
Propagation delay
dIDRAIN/dt = 50 mA/µs
150
ns
TLEB
Leading-edge
blanking
163
170
220
ns
TON-MIN
Minimum turn-on
time
dIDRAIN/dt = 50 mA/µs
260
350
ns
Startup timers and frequency limit
FLIM_MAX
Max internal
frequency limit
TB = GND
176
240
330
kHz
Zero current detector
IZCDB
Input bias current
VZCD = 0.1 to 2.7 V
1
µA
VZCDH
Upper clamp voltage IZCD = 1 mA
3
3.5
V
VZCDL
Lower clamp voltage IZCD = -1 mA
-90
-60
-30
mV
VZCDA
Arming voltage
positive-going edge
100
110
120
mV
VZCDT
Triggering voltage
Negative-going edge
50
60
70
mV
TBLANK
Trigger blanking time
after GaN’s turn-on
VFB>= VFBR , ITB-neg = 0
3.04
4.16
5.66
µs
VFB>= VFBR , ITB-neg = 1 mA
10
15
20
VFB = VFBB
12
16
20
TFORCE
Force turn-on time
after blanking
After soft-start
2
2.7
3.4
µs
During soft-start
23
Compensation
VFBH
Upper saturation
3
V
VFBR
Frequency reduction
threshold
0.98
1.15
1.32
V
VFBB
Burst-mode
threshold
0.63
0.7
0.77
V
VHYST
Burst-mode
hysteresis
60
mV
KV
FB voltage to current
sense threshold gain
83.53
mV/V
VIPERGAN50
Electrical characteristics
DS13888 - Rev 2
page 7/37



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