STM32G0C1NET3XTR datasheet(95/159 Pages) STMICROELECTRONICS

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DS13564 Rev 4

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STM32G0C1xC/xE

Electrical characteristics

124

5.3.14

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 55 are derived from tests

performed under the conditions summarized in Table 24: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant.

Table 55. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL(1)

I/O input low level

voltage

All

except

FT_c

1.62 V < VDDIOx < 3.6 V

0.3 x VDDIOx

(2)

0.39 x VDDIOx

- 0.06 (3)

FT_c

2.7 V < VDDIOx < 3.6 V

0.3 x VDDIOx

1.62 V < VDDIOx < 2.7 V

0.25 x VDDIOx

VIH(1)

I/O input high level

voltage

All

except

FT_c

1.62 V < VDDIOx < 3.6 V

0.7 x VDDIOx(

0.49 x VDDIOx

+ 0.26(3)

FT_c

1.62 V < VDDIOx < 3.6 V

0.7 x VDDIOx

-5

Vhys(3) I/O input hysteresis

TT_xx,

FT_xx,

NRST

1.62 V < VDDIOx < 3.6 V

200

Ilkg

Input leakage

current(3)

FT_xx

except

FT_c

and

FT_d

0 < VIN ≤ VDDIOx

±70

VDDIOx ≤ VIN ≤ VDDIOx+1 V

600(4)

VDDIOx +1 V < VIN ≤

5.5 V(3)

150(4)

FT_c

0 < VIN ≤ VDDIOx

2000

VDDIOx < VIN ≤ 5 V

3000(4)

FT_d

0 < VIN ≤ VDDIOx

4500

VDDIOx < VIN ≤ 5.5 V

9000(4)

TT_a

0 < VIN ≤ VDDIOx

±150

VDDIOx < VIN ≤

VDDIOx + 0.3 V

2000(4)

RPU

Weak pull-up

equivalent resistor

(5)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent resistor(5)

VIN = VDDIOx

kΩ

CIO

I/O pin capacitance

1. Refer to Figure 24: I/O input characteristics.

2. Tested in production.

3. Guaranteed by design.

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