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STM32G0C1NET6X 数据表(PDF) 114 Page - STMicroelectronics

部件名 STM32G0C1NET6X
功能描述  Arm® Cortex®-M0 32-bit MCU, up to 512KB Flash, 144KB RAM,6x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  159 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32G0C1NET6X 数据表(HTML) 114 Page - STMicroelectronics

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Electrical characteristics
STM32G0C1xC/xE
114/159
DS13564 Rev 4
5.3.21
Temperature sensor characteristics
tSTART
Comparator startup
time to reach
propagation delay
specification
High-speed mode
-
-
5
µs
Medium-speed mode
-
-
15
tD
Propagation delay
200 mV step;
100 mV
overdrive
High-speed mode
-
30
50
ns
Medium-speed mode
-
0.3
0.6
µs
>200 mV step;
100 mV
overdrive
High-speed mode
-
-
70
ns
Medium-speed mode
-
-
1.2
µs
Voffset
Comparator offset
error
Full common mode range
-
±5
±20
mV
Vhys
Comparator
hysteresis
No hysteresis
-
0
-
mV
Low hysteresis
-
10
-
Medium hysteresis
-
20
-
High hysteresis
-
30
-
IDDA(COMP)
Comparator
consumption from
VDDA
Medium-speed
mode;
No deglitcher
Static
-
5
7.5
µA
With 50 kHz and ±100 mV
overdrive square signal
-6
-
Medium-speed
mode;
With deglitcher
Static
-
7
10
With 50 kHz and ±100 mV
overdrive square signal
-8
-
High-speed
mode
Static
-
250
400
With 50 kHz and ±100 mV
overdrive square signal
-250
-
1. Guaranteed by design.
2. Refer to Table 27: Embedded internal voltage reference.
Table 67. COMP characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 68. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VTS linearity with temperature
-
±1
±2
°C
Avg_Slope(2)
Average slope
2.3
2.5
2.7
mV/°C
V30
Voltage at 30°C (±5 °C)(3)
0.742
0.76
0.785
V
tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4)
-8
15
µs
tSTART(1)
Start-up time when entering in continuous mode(4)
-
70
120
µs



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