AT45DB321E datasheet(10/69 Pages) RENESAS

10 / 69 page

AT45DB321E

8784M–DFLASH–02/2022

To perform a Buffer to Main Memory Page Program with Built-In Erase using the binary page size (512 bytes), an opcode

of 83h for Buffer 1 or 86h for Buffer 2 must be clocked into the device followed by three address bytes comprised of two

dummy bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and nine dummy

bits.

When a low-to-high transition occurs on the CS pin, the device will first erase the selected page in main memory (the

erased state is a Logic 1) and then program the data stored in the appropriate buffer into that same page in main

memory. Both the erasing and the programming of the page are internally self-timed and should take place in a

maximum time of t

EP. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.

The device also incorporates an intelligent erase and program algorithm that can detect when a byte location fails to

erase or program properly. If an erase or programming error arises, it will be indicated by the EPE bit in the Status

6.3

Buffer to Main Memory Page Program without Built-In Erase

The Buffer to Main Memory Page Program without Built-In Erase command allows data that is stored in one of the SRAM

buffers to be written into a pre-erased page in the main memory array. It is necessary that the page in main memory to be

written be previously erased in order to avoid programming errors.

To perform a Buffer to Main Memory Page Program without Built-In Erase using the standard DataFlash page size (528

bytes), an opcode of 88h for Buffer 1 or 89h for Buffer 2 must be clocked into the device followed by three address bytes

comprised of one dummy bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written,

and 10 dummy bits.

To perform a Buffer to Main Memory Page Program using the binary page size (512 bytes), an opcode of 88h for Buffer

1 or 89h for Buffer 2 must be clocked into the device followed by three address bytes comprised of two dummy bits, 13

page address bits (A21 - A9) that specify the page in the main memory to be written, and nine dummy bits.

When a low-to-high transition occurs on the CS pin, the device will program the data stored in the appropriate buffer into

the specified page in the main memory. The page in main memory that is being programmed must have been previously

erased using one of the erase commands (Page Erase, Block Erase, Sector Erase, or Chip Erase). The programming of

the page is internally self-timed and should take place in a maximum time of t

P. During this time, the RDY/BUSY bit in the

Status Register will indicate that the device is busy.

The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program

properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.

6.4

Main Memory Page Program through Buffer with Built-In Erase

The Main Memory Page Program through Buffer with Built-In Erase command combines the Buffer Write and Buffer to

Main Memory Page Program with Built-In Erase operations into a single operation to help simplify application firmware

development. With the Main Memory Page Program through Buffer with Built-In Erase command, data is first clocked

into either Buffer 1 or Buffer 2, the addressed page in memory is then automatically erased, and then the contents of the

appropriate buffer are programmed into the just-erased main memory page.

To perform a Main Memory Page Program through Buffer using the standard DataFlash page size (528 bytes), an

opcode of 82h for Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes

comprised of one dummy bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written,

and 10 buffer address bits (BFA9 - BFA0) that select the first byte in the buffer to be written.

To perform a Main Memory Page Program through Buffer using the binary page size (512 bytes), an opcode of 82h for

Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes comprised of two dummy

bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and nine buffer address bits

(BFA8 - BFA0) that select the first byte in the buffer to be written.

After all address bytes have been clocked in, the device will take data from the input pin (SI) and store it in the specified

data buffer. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When

there is a low-to-high transition on the CS pin, the device will first erase the selected page in main memory (the erased

state is a Logic 1) and then program the data stored in the buffer into that main memory page. Both the erasing and the

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