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ADPA1122AEHZ-R7 数据表(PDF) 1 Page - Analog Devices |
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ADPA1122AEHZ-R7 数据表(HTML) 1 Page - Analog Devices |
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1 / 17 page ![]() Data Sheet ADPA1122 43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typical from 8.2 GHz to 11 GHz ► PAE: 46% typical from 9.6 GHz to 11 GHz ► Supply voltage: 28 V at 200 mA on 10% duty cycle ► 18-terminal, 7 mm × 7 mm, LCC_HS package APPLICATIONS ► Weather radars ► Marine radars ► Military radars GENERAL DESCRIPTION The ADPA1122 is a gallium nitride (GaN), power amplifier that delivers 43 dBm (20 W) with more than 43% power added efficien- cy (PAE) across its 8.2 GHz to 11.8 GHz frequency range. The ADPA1122 provides ±0.5 dB of gain flatness from 9.6 GHz to 11 GHz. The ADPA1122 is optimized for pulsed applications such as military, marine, and weather radar. The ADPA1122 is packaged in an 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS] that exhibits low thermal resistance and is compatible with surface-mount manu- facturing techniques. FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram |
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