6.42

71321SA/LA and 71421SA/LA

High Speed 2K x 8 Dual-Port Static RAM with Interrupts

Industrial and Commercial Temperature Ranges

5

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)

NOTE:

1. At Vcc < 2.0V leakages are undefined.

Data Retention Characteristics (LA Version Only)

NOTES:

1. VCC = 2V, TA = +25°C, and is not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed but not production tested.

Data Retention Waveform

VCC

CE

4.5V

4.5V

DATA RETENTION MODE

tCDR

tR

VIH

VIH

VDR

VDR

2.0V

2691 drw 04

≥

,

Symbol

Parameter

Test Conditions

71321SA

71421SA

71321LA

71421LA

Unit

Min.

Max.

Min.

Max.

|ILI|

Input Leakage Current(1)

VCC = 5.5V, VIN = 0V to VCC

___

10

___

5µA

|ILO|

Output Leakage Current(1)

CE = VIH, VOUT = 0V to VCC,

VCC - 5.5V

___

10

___

5µA

VOL

Output Low Voltage (I/O0-I/O7)IOL = 4mA

___

0.4

___

0.4

V

VOL

Open Drain Output

Low Voltage (BUSY/INT)

IOL = 16mA

___

0.5

___

0.5

V

VOH

Output High Voltage

IOH = -4mA

2.4

___

2.4

___

V

2691 tbl 05

Symbol

Parameter

Test Condition

Min.

Typ.(1)

Max.

Unit

VDR

VCC for Data Retention

2.0

____

____

V

ICCDR

Data Retention Current

VCC = 2.0V, CE > VCC - 0.2V

COM'L

____

100

1500

µA

VIN > VCC - 0.2V or VIN < 0.2V

IND

____

100

4000

µA

tCDR(3)

Chip Deselect to Data Retention Time

0

____

____

ns

tR(3)

Operation Recovery Time

tRC(2)

____

____

ns

2691 tbl 06