| 数据搜索系统,热门电子元器件搜索 |
|
RA4E2 数据表(PDF) 21 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
RA4E2 数据表(HTML) 21 Page - Renesas Technology Corp |
|
21 / 90 page ![]() Table 2.6 I/O VOH, VOL, and other characteristics (2 of 2) Parameter Symbol Min Typ Max Unit Test conditions Pull-up current serving as the SCL current source I3C*4 ICS 3 — 12 mA VCC = 3.0 to 3.6 V Vin = 0.3 × VCC to 0.7 × VCC Input capacitance Ports P003, P014, P015,P814, P815 Cin — — 16 pF Vbias = 0 V Vamp = 20 mV f = 1 MHz Ta = 25°C Other input pins — — 8 Note 1. SCL0_A, SCL0_B, SCL0_C, SDA0_A, SDA0_B, and SDA0_C (total 6 pins). Note 2. I3C_SCL/SCL0_D, I3C_SDA/SDA0_D (total 2 pins). Note 3. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving ability is retained in Deep Software Standby mode. Note 4. I3C_SCL/SCL0_D (1 pin). This is the value when IIC high speed mode is selected. 2.2.5 Operating and Standby Current Table 2.7 Operating and standby current (1 of 2) Parameter Symbol Min Typ Max Unit Test conditions Supply current*1 High-speed mode Maximum*2 *13 ICC*3 — — 61 mA ICLK = 100 MHz PCLKA = 100 MHz PCLKB = 50 MHz PCLKC = 50 MHz PCLKD = 100 MHz FCLK = 50 MHz CoreMark®*5 *6 *12 — 8.2 — Normal mode All peripheral clocks enabled, while (1) code executing from flash*4 *12 — 13.5 — All peripheral clocks disabled, while (1) code executing from flash*5 *6 *12 — 9.1 — Sleep mode*5 — 5.3*6 *12 42*7 *13 Increase during BGO operation Data flash P/E — 6 — Code flash P/E — 8 — Low-speed mode*5 *10 — 1.8 — ICLK = 1 MHz Subosc-speed mode*5 *11 — 1.6 — ICLK = 32.768 kHz Software Standby mode SNZCR.RXDREQEN = 1 — — 35 — SNZCR.RXDREQEN = 0 — 1.4 — — Deep Software Standby mode Power supplied to Standby SRAM and USB resume detecting unit — 16 96 µA — Power not supplied to SRAM or USB resume detecting unit Power-on reset circuit low power function disabled — 11 25.6 — Power-on reset circuit low power function enabled — 4.2 20.4 — Increase when the RTC and AGT are operating When the low-speed on-chip oscillator (LOCO) is in use — 4.5 — — When a crystal oscillator for low clock loads is in use — 1.0 — — When a crystal oscillator for standard clock loads is in use — 1.4 — — Inrush current on returning from deep software standby mode Inrush current*8 IRUSH — 160 — mA — Energy of inrush current*8 ERUSH — 1.0 — µC — RA4E2 Datasheet 2. Electrical Characteristics R01DS0413EJ0110 Rev.1.10 Feb 28, 2023 Page 21 of 90 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |