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RA4E2 数据表(PDF) 21 Page - Renesas Technology Corp

部件名 RA4E2
功能描述  Renesas Microcontrollers
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4E2 数据表(HTML) 21 Page - Renesas Technology Corp

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Table 2.6
I/O VOH, VOL, and other characteristics (2 of 2)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Pull-up current serving
as the SCL current
source
I3C*4
ICS
3
12
mA
VCC = 3.0 to 3.6 V
Vin = 0.3 × VCC to 0.7 × VCC
Input capacitance
Ports P003, P014,
P015,P814, P815
Cin
16
pF
Vbias = 0 V
Vamp = 20 mV
f = 1 MHz
Ta = 25°C
Other input pins
8
Note 1. SCL0_A, SCL0_B, SCL0_C, SDA0_A, SDA0_B, and SDA0_C (total 6 pins).
Note 2. I3C_SCL/SCL0_D, I3C_SDA/SDA0_D (total 2 pins).
Note 3. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register. The selected driving
ability is retained in Deep Software Standby mode.
Note 4. I3C_SCL/SCL0_D (1 pin). This is the value when IIC high speed mode is selected.
2.2.5
Operating and Standby Current
Table 2.7
Operating and standby current (1 of 2)
Parameter
Symbol
Min Typ
Max
Unit Test conditions
Supply
current*1
High-speed
mode
Maximum*2 *13
ICC*3
61
mA
ICLK = 100 MHz
PCLKA = 100
MHz
PCLKB = 50 MHz
PCLKC = 50 MHz
PCLKD = 100
MHz
FCLK = 50 MHz
CoreMark®*5 *6 *12
8.2
Normal mode
All peripheral clocks enabled,
while (1) code executing from
flash*4 *12
13.5
All peripheral clocks disabled,
while (1) code executing from
flash*5 *6 *12
9.1
Sleep mode*5
5.3*6
*12
42*7
*13
Increase
during BGO
operation
Data flash P/E
6
Code flash P/E
8
Low-speed mode*5 *10
1.8
ICLK = 1 MHz
Subosc-speed mode*5 *11
1.6
ICLK = 32.768
kHz
Software Standby mode
SNZCR.RXDREQEN = 1
35
SNZCR.RXDREQEN = 0
1.4
Deep
Software
Standby
mode
Power supplied to Standby SRAM and USB
resume detecting unit
16
96
µA
Power not
supplied to
SRAM or USB
resume
detecting unit
Power-on reset circuit low power
function disabled
11
25.6
Power-on reset circuit low power
function enabled
4.2
20.4
Increase when
the RTC and
AGT are
operating
When the low-speed on-chip
oscillator (LOCO) is in use
4.5
When a crystal oscillator for low
clock loads is in use
1.0
When a crystal oscillator for
standard clock loads is in use
1.4
Inrush current on returning from deep
software standby mode
Inrush current*8
IRUSH
160
mA
Energy of inrush
current*8
ERUSH
1.0
µC
RA4E2 Datasheet
2. Electrical Characteristics
R01DS0413EJ0110 Rev.1.10
Feb 28, 2023
Page 21 of 90



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