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ICS841S012DI 数据表(PDF) 7 Page - Renesas Technology Corp

部件名 ICS841S012DI
功能描述  Crystal-to-0.7V Differential HCSL/ LVCMOS Frequency Synthesizer
PDF  24 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

ICS841S012DI 数据表(HTML) 7 Page - Renesas Technology Corp

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841S012DI Datasheet
©2016 Integrated Device Technology, Inc
January 4, 2016
7
TABLE 6. AC CHARACTERISTICS, V
DD
= V
DD_REFOUT
= V
DDOB
= V
DDOC
= 3.3V±5%, TA = -40°C TO 85°C
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
f
OUT
Output Frequency
QB[0:6]
33.33
200
MHz
QA[0:1]/nQA[0:1]
100
250
MHz
QC
33.33
200
MHz
tsk(b)
Bank Skew;
NOTE 1, 2
QB[0:6]
50
ps
QA[0:1]/nQA[0:1]
50
ps
tsk(o)
Output Skew; NOTE 1, 3
across Banks B and C
(at Same Frequency)
160
ps
tjit(cc)
Cycle-to-Cycle
Jitter; NOTE 1
QA[0:1]/nQA[0:1]
All Outputs at Same Fre-
quency
65
ps
tjit(per)
RMS Period Jitter
QA[0:1]/nQA[0:1]
REF_OE = 0, All Outputs
at Same Frequency
10
ps
QB[0:6]
20
ps
QC
20
ps
F
M
SSC Modulation
Frequency
Banks A, B, C
29
33.33
kHz
V
HIGH
Voltage High; NOTE 4, 5
580
1200
mV
V
LOW
Voltage Low; NOTE 4, 6
-150
mV
V
CROSS
Absolute Crossing Voltage;
NOTE 4, 7, 8
200
600
mV
ΔV
CROSS
Total Variation of V
CROSS
over all edges;
NOTE 4, 7, 9
200
mV
t
R
/ t
F
Output Rise/Fall
Time
Bank A
±150mV from crosspoint
25
100
ps
Banks B, C
20% - 80%
0.4
1.3
ns
odc
Output Duty Cycle
Bank A
45
55
%
Banks B, C
42
58
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established
when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet
specifications after thermal equilibrium has been reached under these conditions.
NOTE 1: This parameter is defined in accordance with JEDEC Standard 65.
NOTE 2: Defined as skew within a bank of outputs at the same supply voltage and with equal load conditions.
NOTE 3: Defined as skew between outputs at the same supply voltages and with equal load conditions.
Measured at V
DDOB, C
/2.
NOTE 4: Measurement taken from single-ended waveform.
NOTE 5: Defined as the maximum instantaneous voltage including overshoot. See Parameter Measurement Information
Section.
NOTE 6: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information
Section.
NOTE 7: Measured at crossing point where the instantaneous voltage value of the rising edge of Qx equals the falling edge of
nQx. See Parameter Measurement Information Section.
NOTE 8: Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Re-
fers to all crossing points for this measurement. See Parameter Measurement Information Section.
NOTE 9: Defined as the total variation of all crossing voltage of rising Qx and falling nQx. This is the maximum allowed vari-
ance in the V
CROSS
for any particular system. See Parameter Measurement Information Section.



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