BAS86 datasheet(3/6 Pages) PHILIPS

部件名	BAS86

功能描述	Schottky barrier diode

PDF	6 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 6 page

1996 Oct 01

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAS86

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD80 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

see Fig.3

IF = 0.1 mA

300

IF =1mA

380

IF =10mA

450

IF =30mA

600

IF = 100 mA

900

reverse current

VR = 40 V; see Fig.4; note 1

µA

trr

reverse recovery time

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.6

4ns

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.5

8pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

320

K/W

BAS86 数据表(PDF) 3 Page - NXP Semiconductors

BAS86 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

数据表下载