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BAS86 数据表(PDF) 4 Page - NXP Semiconductors |
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BAS86 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page ![]() 1996 Oct 01 4 Philips Semiconductors Product specification Schottky barrier diode BAS86 GRAPHICAL DATA Fig.2 Derating curve. handbook, halfpage 0 50 100 150 200 250 0 50 100 150 IF(AV) (mA) T ( C) amb o MRA540 Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage 10 IF VF (V) 3 10 (mA) 2 10 1 10 1 1.2 0.8 0.4 0 MSA892 (3) (2) (1) (3) (2) (1) (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (1) Tamb =85 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10 5 10 (nA) I R 4 10 3 10 2 10 10 1 −1 50 0 MGC686 10 20 30 40 V R (V) (1) (2) (3) Fig.4 Reverse current as a function of reverse voltage; typical values. f = 1 MHz. Fig.5 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 050 12 Cd 0 4 8 (pF) MGC687 10 20 30 40 V R (V) |
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