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BAV70S 数据表(PDF) 5 Page - NXP Semiconductors |
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BAV70S 数据表(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1997 Oct 21 5 Philips Semiconductors Product specification High-speed double diode array BAV70S Fig.5 Reverse current as a function of junction temperature. 102 10 200 0 MGA885 100 T ( C) j o IR ( A) µ 1 75 V 25 V typ max typ 10 2 10 1 V = 75 V R Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 08 16 12 4 0.8 0.6 0 0.4 0.2 MBG446 VR (V) Cd (pF) |
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