BAV70S datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Oct 21

Philips Semiconductors

Product speciﬁcation

High-speed double diode array

BAV70S

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. One or more diodes loaded.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 1 mA

715

IF = 10 mA

855

IF =50mA

IF = 150 mA

1.25

reverse current

see Fig.5

VR = 25 V

VR = 75 V

2.5

µA

VR = 25 V; Tj = 150 °C60

µA

VR = 75 V; Tj = 150 °C

100

µA

diode capacitance

VR = 0; f = 1 MHz; see Fig.6

1.5

trr

reverse recovery time

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

4ns

Vfr

forward recovery voltage

when switched from IF = 10 mA; tr = 20 ns; see Fig.8

1.75

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

note 1

255

K/W

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