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BAV70S 数据表(PDF) 4 Page - NXP Semiconductors |
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BAV70S 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 1997 Oct 21 4 Philips Semiconductors Product specification High-speed double diode array BAV70S GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. 0 200 300 0 100 200 MBK148 100 Ts (°C) I F (mA) single diode loaded all diodes loaded (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 02 300 IF (mA) 0 100 200 MBG382 1 VF (V) (1) (3) (2) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj =25 °C prior to surge. handbook, full pagewidth MBG704 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 |
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