Nexperia

BAS416-Q

Low-leakage switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA; Tj = 25 °C

-

-

0.9

V

IF = 10 mA; Tj = 25 °C

-

-

1

V

IF = 50 mA; Tj = 25 °C

-

-

1.1

V

VF

forward voltage

IF = 150 mA; Tj = 25 °C

-

-

1.25

V

VR = 75 V; pulsed; Tj = 25 °C

-

0.003 5

nA

IR

reverse current

VR = 75 V; pulsed; Tj = 150 °C

-

3

80

nA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

-

2

-

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tj = 25 °C

-

0.8

3

µs

0

IF

(mA)

100

200

300

0

100

200

Tamb (°C)

mhc323

Device mounted on an FR4 printed-circuit board.

Fig. 1. Maximum permissible continuous forward

current as a function of ambient temperature.

mlb752

300

0

100

200

IF

(mA)

0

1.6

0.8

1.2

0.4

VF (V)

(1) (2)

(3)

(1) Tamb = 150 °C; typical values

(2) Tamb = 25 °C; typical values

(3) Tamb = 25 °C; maximum values

Fig. 2. Forward current as a function of forward

voltage; per diode

BAS416-Q

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Product data sheet

18 April 2023

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