Nexperia

BAS416-Q

Low-leakage switching diode

11. Test information

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 1 mA

Fig. 6. Reverse recovery time test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

03-12-17

Dimensions in mm

0.25

0.10

0.45

0.15

2.7

2.3

1.8

1.6

0.40

0.25

1.1

0.8

1.35

1.15

1

2

Fig. 7. Package outline SOD323

BAS416-Q

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

18 April 2023

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