Nexperia

BAS416-Q

Low-leakage switching diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS416-Q

SOD323

plastic, surface-mounted package; 2 leads; 1.3 mm pitch;

1.7 mm x 1.25 mm x 0.95 mm body

SOD323

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS416-Q

D4

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

85

V

VR

reverse voltage

-

75

V

IF

forward current

Tj = 25 °C

-

200

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

In free air

[1]

-

-

450

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

BAS416-Q

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

18 April 2023

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