STP1N120 datasheet(3/10 Pages) STMICROELECTRONICS

部件名	STP1N120

功能描述	channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP1N120

Electrical ratings

3/10

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS=0)

1200

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

500

Drain current (continuous) at TC = 100°C

315

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

Derating factor

0.36

W/°C

PTOT

Total dissipation at TC = 25°C

dv/dt (2)

ISD ≤1A, di/dt ≤200A/µs, VDD ≤960

Peak diode recovery voltage slope

Tbd

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

2.78

°C/W

Rthj-amb (1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Tbd

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAS, VDD= 50V)

Tbd

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