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STP1N120 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP1N120
功能描述  channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP1N120 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP1N120
4/10
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
1200
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50µA
33.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 0.25A
30
38
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1MHz, VGS=0
130
22
3
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=960V, ID = 500mA
VGS =10V
(see Figure 2)
7
Tbd
Tbd
nC
nC
nC



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