STP1N120

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Tbd

Tbd

Tbd

Tbd

Tbd

ns

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Source-drain current

Source-drain current (pulsed)

500

2

mA

A

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

Tbd

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 50A/µs,Tj=25°C

(see Figure 6)

Tbd

Tbd

Tbd

ns

nC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt=50A/µs,Tj=150°C

(see Figure 6)

Tbd

Tbd

Tbd

ns

nC

A

Table 8.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

(1)

1.

The built-in-back zener diodes have specifically been designed to enhance not only the device’s ESD

capability, but also to make them safely absorb possibile voltage transients that may occasionally be

applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and ost-

effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage

of external components.

Gate-source breakdown voltage Igs ± 1mA, (open drain)

30

V