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BAS416 数据表(PDF) 4 Page - Nexperia B.V. All rights reserved |
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BAS416 数据表(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 10 page ![]() Nexperia BAS416 Low-leakage diode mbg704 10 1 102 IFSM (A) 10-1 tp (µs) 1 104 103 10 102 Based on square wave currents. Tj(init) = 25 °C Fig. 3. Non-repetitive peak forward current as a function of pulse duration; typical values 102 150 200 50 0 mlb754 100 10 1 10- 1 10- 2 10- 3 IR (nA) Tj (°C) (1) (2) VR = 75 V (1) Maximum values (2) Typical values Fig. 4. Reverse current as a function of junction temperature mbg526 0 10 20 15 5 VR (V) 2 0 1 Cd (pF) f = 1 MHz; Tamb = 25 °C Fig. 5. Diode capacitance as a function of reverse voltage; typical values BAS416 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 4 / 10 |
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