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BAS416 数据表(PDF) 2 Page - Nexperia B.V. All rights reserved |
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BAS416 数据表(HTML) 2 Page - Nexperia B.V. All rights reserved |
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2 / 10 page ![]() Nexperia BAS416 Low-leakage diode 6. Ordering information Table 3. Ordering information Package Type number Name Description Version BAS416 SOD323 plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body SOD323 7. Marking Table 4. Marking codes Type number Marking code BAS416 D4 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 85 V VR reverse voltage - 75 V IF forward current Tj = 25 °C - 200 mA tp = 1 µs; square wave; Tj(init) = 25 °C - 4 A tp = 1 ms; square wave; Tj(init) = 25 °C - 1 A IFSM non-repetitive peak forward current tp = 1 s; square wave; Tj(init) = 25 °C - 0.5 A IFRM repetitive peak forward current - 500 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS416 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 2 / 10 |
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