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BAS416 数据表(PDF) 5 Page - Nexperia B.V. All rights reserved |
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BAS416 数据表(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 10 page ![]() Nexperia BAS416 Low-leakage diode 11. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 1 mA Fig. 6. Reverse recovery time test circuit and waveforms Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAS416 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 5 / 10 |
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