BLP5LA55SG

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© Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet

Rev. 1 — 7 April 2023

12 of 20

BLP5LA55SG

Power LDMOS transistor

7.3.3 1-Tone CW measurements (f = 380 MHz to 450 MHz)

VDS = 13.6 V; IDq = 80 mA; PL =55 W.

VDS = 13.6 V; IDq = 80 mA.

(1) f = 380 MHz

(2) f = 400 MHz

(3) f = 410 MHz

(4) f = 420 MHz

(5) f = 430 MHz

(6) f = 450 MHz

Fig 11. Power gain and drain efficiency as function of

frequency; typical values

Fig 12. Drain efficiency as a function of output power;

typical values

amp01405

360

380

400

420

440

460

00

20

20

40

40

60

60

80

80

f (MHz)

Gp

Gp

(dB)

(dB)

(dB)

ηD

ηD

(%)

(%)

(%)

Gp

Gp

ηD

ηD

amp01406

0

20

40

60

80

100

20

30

40

50

60

70

80

PL (W)

ηD

ηD

(%)

(%)

(%)

(6)

(6)

(6)

(5)

(5)

(5)

(4)

(4)

(4)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)