VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC7923

SONET/SDH 2.5Gb/s Laser Diode Driver

Page 2

G52203-0, Rev 3.0

05/11/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Table 1: Signal Pin Reference

Table 2: Absolute Maximum Ratings

Table 3: Recommended Operating Conditions

NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the

Maximum Case Temperature” for detailed maximum temperature calculations.

Table 4: ECL Input and Outputs

Signal

Type

Level

# Pins

Description

DIN

In

ECL

1

Data Input

MK, NMK

Out

ECL

2

Data Density Differential Outputs

NIOUT

Out

1

Laser Modulation Current Output (Complementary)

IOUT

Out

1

Laser Modulation Current Output (To Laser Cathode))

VSS

Pwr

Pwr

5

Negative Voltage Rail

GND

Pwr

Pwr

9

Positive Voltage Rail

VIP

In

DC

1

Modulation Gate Node

MIP

In

DC

1

Modulation Source Node

VIB

In

DC

1

Bias Gate Node

MIB

In

DC

1

Bias Source Node

VREF

In

DC

1

Data Input Reference

Total Pins

24

Symbol

Rating

Limit

Negative Power Supply Voltage

Maximum Junction Temperature

-55°C to + 125°C

Storage Temperature

-65°C to +150°C

Symbol

Parameter

Min

Typ

Max

Units

Conditions

GND

Positive Voltage Rail

—

0

—

V

VSS

Negative Voltage Rail

-5.5

-5.2

-4.9

V

-40

—

°C

Power dissipation = 1.25W

Junction Temperature

——

125

°C

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Input Voltage Swing

300

—

800

mV

ECL Output High Voltage

-1200

——

mV

50

Ω to -2.0V

ECL Output Low Voltage

——

-1600

mV

50

Ω to -2.0V