VITESSE

SEMICONDUCTOR CORPORATION

G52203-0, Rev 3.0

Page 3

05/11/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Preliminary Data Sheet

VSC7923

SONET/SDH 2.5Gb/s Laser Diode Driver

Table 5: Power Dissipation

Table 6: Laser Driver DC Electrical Specifications

Table 7: Laser Driver AC Electrical Specifications

Table 8: Package Thermal Specifications

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Power Supply Current (VSS)

——

220

mA

Total Power Dissipation

——

1210

mW

Maximum Power Dissipation

——

1815

mW

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Programmable Laser Bias Current

2

—

50

mA

—

Programmable Modulation Current

2

—

60

mA

—

Laser Bias Control Voltage

——

2.1

Laser Modulation Control Voltage

——

2.1

Output Voltage Compliance

GND -

2.2V

——

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Output Rise and Fall Times

——

100

ps

25

Ω load, 20%-80%,

Symbol

Parameter

Min

Typ

Max

Units

Conditions

θ

JCC

Thermal Resistance from Junction-to-Case

—

25

—

°C/W

Ceramic Package

θ

JCMG

Thermal Resistance from Junction-to-Case

—

32

—

°C/W

Metal Glass Package