2000 Jul 19

8

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

k

V

V

--------------------------------------

=

handbook, halfpage

−65

185

0

0.4

MGM199

0.8

1.2

−15

35

85

135

Tj (°C)

k

Fig.13 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

k

R

R

-----------------------------------------

=

handbook, halfpage

−65

185

2.0

0

0.4

MGM200

0.8

1.2

1.6

−15

35

85

135

Tj (°C)

k

(2)

(2)

(1)

(1)