2000 Jul 19

2

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

FEATURES

• Very low threshold

• High-speed switching

• No secondary breakdown

• Direct interface to C-MOS, TTL etc.

APPLICATIONS

• Power management

• DC to DC converters

• Battery powered applications

• 'Glue-logic'; interface between logic blocks and/or

periphery

• General purpose switch.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23

SMD package.

PINNING - SOT23

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

s

source

3

d

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM273

2

1

3

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETERS

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

60

V

source-drain diode forward voltage

−

1V

gate-source voltage (DC)

−

±20

V

gate-source threshold voltage

1

−

V

drain current (DC)

−

0.7

A

drain-source on-state resistance

0.81

Ω

total power dissipation

−

0.5

W

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.