2000 Jul 19

4

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

140

K/W

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

(1)

δ =1.

(2)

δ = 0.75.

(3)

δ = 0.5.

(4)

δ = 0.33.

(5)

δ = 0.2.

(6)

δ = 0.1.

(7)

δ = 0.05.

(8)

δ = 0.02.

(9)

δ = 0.01.

(10)

δ=0.

handbook, full pagewidth

10

1

1

MGM192

Rth j-s

(K/W)

tp (s)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

tp

tp

T

P

t

T