Nexperia

74LVC2G38

Dual 2-input NAND gate; open drain

Symbol Parameter

Conditions

Min

Typ[1]

Max

Unit

Tamb = -40 °C to +125 °C

VCC = 1.65 V to 1.95 V

0.65 × VCC

-

-

V

VCC = 2.3 V to 2.7 V

1.7

-

-

V

VCC = 2.7 V to 3.6 V

2.0

-

-

V

VIH

HIGH-level input voltage

VCC = 4.5 V to 5.5 V

0.7 × VCC

-

-

V

VCC = 1.65 V to 1.95 V

-

-

0.35 × VCC V

VCC = 2.3 V to 2.7 V

-

-

0.7

V

VCC = 2.7 V to 3.6 V

-

-

0.8

V

VIL

LOW-level input voltage

VCC = 4.5 V to 5.5 V

-

-

0.3 × VCC V

VI = VIH or VIL

IO = 100 μA; VCC = 1.65 V to 5.5 V

-

-

0.1

V

IO = 4 mA; VCC = 1.65 V

-

-

0.70

V

IO = 8 mA; VCC = 2.3 V

-

-

0.45

V

IO = 12 mA; VCC = 2.7 V

-

-

0.60

V

IO = 24 mA; VCC = 3.0 V

-

-

0.80

V

VOL

LOW-level output voltage

IO = 32 mA; VCC = 4.5 V

-

-

0.80

V

II

input leakage current

VI = 5.5 V or GND; VCC = 0 V to 5.5 V

-

-

±1

μA

IOZ

OFF-state output current

VI = VIH or VIL; VO = VCC or GND;

VCC = 5.5 V

-

±0.1

±2

μA

IOFF

power-off leakage current

VI or VO = 5.5 V; VCC = 0 V

-

-

±2

μA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO = 0 A

-

-

4

μA

ΔICC

additional supply current

per pin; VI = VCC - 0.6 V;

VCC = 2.3 V to 5.5 V; IO = 0 A

-

-

500

μA

[1] All typical values are measured at Tamb = 25 °C.

74LVC2G38

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© Nexperia B.V. 2022. All rights reserved

Product data sheet

Rev. 14 — 21 June 2022

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