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BCR08AM 数据表(PDF) 4 Page - Renesas Technology Corp |
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BCR08AM 数据表(HTML) 4 Page - Renesas Technology Corp |
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4 / 6 page ![]() Mar. 2002 MITSUBISHI SEMICONDUCTOR <TRIAC> BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE 23 10–1 57 100 23 5 7 101 23 5 7 102 22 3 102 57 35 7 104 7105 103 23 5 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 101 7 5 3 2 3 2 102 7 5 3 60 100 140 –40 0 40 80 120 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 –40 0 40 80 120 160 120 80 40 140 100 60 20 0 1.0 0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 2.0 1.6 1.2 0.8 0.4 1.8 1.4 1.0 0.6 0.2 0 1.4 0 0.4 0.2 0.6 0.8 1.0 1.2 100 23 3101 57 57 102 23 5 7103 3 2 101 7 5 3 2 7 5 7 5 3 3 2 10–1 VGD = 0.1V PGM = 1W VGM = 6V VGT IGM = 0.5A PG(AV) = 0.1W IRGT I IRGT III MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT (A) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) TYPICAL EXAMPLE TYPICAL EXAMPLE 360 ° CONDUCTION RESISTIVE, INDUCTIVE LOADS 360 ° CONDUCTION RESISTIVE, INDUCTIVE LOADS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TO AMBIENT JUNCTION TO CASE GATE CHARACTERISTICS |
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