MITSUBISHI SEMICONDUCTOR <TRIAC>

BCR08AM

LOW POWER USE

PLANAR PASSIVATION TYPE

Mar. 2002

✽2. Measurment using the gate trigger characteristics measurement circuit.

✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Symbol

Test conditions

°C

Unit

mA

V

V

V

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

ELECTRICAL CHARACTERISTICS

Parameter

Repetitive peak off-state current

On-state voltage

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Limits

Min.

—

—

—

—

—

—

0.1

—

0.5

Max.

1.0

2.0

2.0

2.0

5

5

—

60

—

II

III

II

III

PERFORMANCE CURVES

ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

23

4

2

23

6

8

10

3

1

5

7

9

0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

7

5

3

2

7

5

3

2

°C

MAXIMUM ON-STATE CHARACTERISTICS

RATED SURGE ON-STATE CURRENT

Test conditions

Commutating voltage and current waveforms

(inductive load)

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

1. Junction temperature

°C

2. Rate of decay of on-state commutating current

3. Peak off-state voltage

✽4