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BCR08AM 数据表(PDF) 2 Page - Renesas Technology Corp

部件名 BCR08AM
功能描述  LOW POWER USE PLANAR PASSIVATION TYPE
PDF  6 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

BCR08AM 数据表(HTML) 2 Page - Renesas Technology Corp

  BCR08AM Datasheet HTML 1Page - Renesas Technology Corp BCR08AM Datasheet HTML 2Page - Renesas Technology Corp BCR08AM Datasheet HTML 3Page - Renesas Technology Corp BCR08AM Datasheet HTML 4Page - Renesas Technology Corp BCR08AM Datasheet HTML 5Page - Renesas Technology Corp BCR08AM Datasheet HTML 6Page - Renesas Technology Corp  
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Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
APPLICATION
Electric fan, air cleaner, other general purpose control applications
BCR08AM
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
° conduction, Tc=56°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
0.8
8
0.26
1
0.1
6
0.5
–40 ~ +125
–40 ~ +125
0.23
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
✽1. Gate open.
• IT (RMS) ..................................................................... 0.8A
• VDRM ....................................................................... 600V
• IRGT I, IRGT III ............................................................ 5mA
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
12
600
720
TYPE
NAME
VOLTAGE
CLASS
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
φ5.0 MAX.
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ0.7
➀ ➂ ➁
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92



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