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BU508DF 数据表(PDF) 5 Page - NXP Semiconductors

部件名 BU508DF
功能描述  Silicon Diffused Power Transistor
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BU508DF 数据表(HTML) 5 Page - NXP Semiconductors

  BU508DF Datasheet HTML 1Page - NXP Semiconductors BU508DF Datasheet HTML 2Page - NXP Semiconductors BU508DF Datasheet HTML 3Page - NXP Semiconductors BU508DF Datasheet HTML 4Page - NXP Semiconductors BU508DF Datasheet HTML 5Page - NXP Semiconductors BU508DF Datasheet HTML 6Page - NXP Semiconductors BU508DF Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DF
Fig.9. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.10. Forward bias safe operating area. T
hs = 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
± 5 newton force on the centre of
the envelope.
Fig.11. Forward bias safe operating area. T
hs = 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
± 5 newton force on the centre of
the envelope.
1.0E-07
1.0E-05
1E-03
1.0E-01
1.0E+1
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508ax
t / s
Zth K/W
D =
tp
tp
T
T
P
t
D
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
July 1998
5
Rev 1.200



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