BU508DF datasheet(1/7 Pages) PHILIPS

部件名	BU508DF

功能描述	Silicon Diffused Power Transistor

PDF	7 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

1 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency

diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

P

tot

Total power dissipation

T

hs ≤ 25 ˚C

-

34

W

V

CEsat

Collector-emitter saturation voltage

I

C = 4.5 A; IB = 1.6 A

-

1.0

V

I

Csat

Collector saturation current

f = 16kHz

4.5

-

A

V

F

Diode forward voltage

I

F = 4.5 A

1.6

2.0

V

t

f

Fall time

I

Csat = 4.5 A; f = 16kHz

0.7

-

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

I

B

Base current (DC)

-

4

A

I

BM

Base current peak value

-

6

A

P

tot

Total power dissipation

T

hs ≤

25 ˚C

-

34

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

12

3

case

b

c

e

July 1998

1

Rev 1.200

类似零件编号 - BU508DF

制造商	部件名	数据表	功能描述
Wing Shing Computer Com...	BU508DF	141Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Continental Device Indi...	BU508DF	40Kb / 3P	NPN POWER TRANSISTORS
List of Unclassifed Man...	BU508DF	228Kb / 2P	SILICON DIFFUSED POWER TRANSISTORS
TRANSYS Electronics Lim...	BU508DF	59Kb / 2P	NPN POWER TRANSISTORS
Savantic, Inc.	BU508DF	119Kb / 3P	Silicon NPN Power Transistors

More results

类似说明 - BU508DF

制造商	部件名	数据表	功能描述
NXP Semiconductors	BU1706A	76Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.000
	BU1706AB	83Kb / 7P	Silicon Diffused Power Transistor February 1998 Rev 1.000
	BU2506DF	66Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.400
	BU2507AX	55Kb / 6P	Silicon Diffused Power Transistor eptember 1997 Rev 1.100
Wing Shing Computer Com...	2SD1577	138Kb / 1P	Silicon Diffused Power Transistor
Wing Shing Computer Com...	S2005A	95Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998-Rev 1.600
	BUJ100B	65Kb / 8P	Silicon Diffused Power Transistor May 2001-Rev 1.000
	BUJ105AD	88Kb / 12P	Silicon diffused power transistor Rev. 01-14 December 2004
	BUJ403A127	125Kb / 9P	Silicon Diffused Power Transistor December 1998