 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
BU508DF 数据表(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BU508DF 数据表(HTML) 3 Page - NXP Semiconductors |
|
|
3 / 7 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit Fig.4. Typical DC current gain. h FE = f (IC) parameter V CE IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE + 150 v nominal adjust for ICsat 1mH 12nF D.U.T. LB IBend -VBB ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 1 10 100 IC/A h FE BU508AD July 1998 3 Rev 1.200 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
