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MASTERGAN2 数据表(PDF) 6 Page - STMicroelectronics

部件名 MASTERGAN2
功能描述  High power density 600V Half bridge driver with two enhancement mode GaN HEMT
PDF  29 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MASTERGAN2 数据表(HTML) 6 Page - STMicroelectronics

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4
Electrical characteristics
4.1
Driver
Table 5. Driver electrical characteristics
VCC = PVCC = 6 V; SENSE = GND; TJ = 25°C, unless otherwise specified (each voltage referred to GND unless otherwise
specified)
Symbol
Parameter
Test condition
Min Typ Max Unit
Logic section supply
VCCthON
VCC vs. GND
VCC UV turn ON threshold (1)
4.2
4.5 4.75
V
VCCthOFF
VCC UV turn OFF threshold(1)
3.9
4.2
4.5
V
VCChys
VCC UV hysteresis(1)
0.2
0.3 0.45
V
IQVCCU
VCC undervoltage quiescent supply current VCC = PVCC = 3.8 V
320 410
μA
IQVCC
VCC quiescent supply current
SD/OD = LIN = 5 V;
HIN = 0 V;
BOOT = 7 V
680 900
μA
ISVCC
VCC switching supply current
SD/OD = 5 V;
VBO = 6.5 V;
VS = 0 V; FSW = 500 kHz
0.8
mA
Low-side driver section supply
IQPVCC
PVCC vs. PGND
PVCC quiescent supply current
SD/OD = LIN = 5 V
150
μA
ISPVCC
PVCC switching supply current
VS = 0 V
FSW = 500 kHz
1.4
mA
RBLEED
GL vs. PGND
Low side gate bleeder
PVCC = PGND
75
100 125
kΩ
RONL
Low side turn on resistance (2)
I(GL) = 1 mA (source)
52
ROFFL
Low side turn off resistance(2)
I(GL) = 1 mA (sink)
2
High-side floating section supply
VBOthON
BOOT vs. OUTb
VBO UV turn ON threshold (3)
3.6
4.0
4.4
V
VBOthOFF
VBO UV turn OFF threshold(3)
3.4
3.7
4.0
V
VBOhys
VBO UV hysteresis(3)
0.1
0.3
0.5
V
IQBOU
VBO undervoltage quiescent supply
current(3)
VBO = 3.4 V
140 200
μA
IQBO
VBO quiescent supply current(3)
VBO = 6 V; LIN = GND;
SD/OD = HIN = 5 V;
217
μA
ISBO
BOOT
BOOT switching supply current
VBO = 6 V;
SD/OD = 5 V;
VS = 0 V; FSW = 500 kHz
1.9
mA
ILK
BOOT vs. SGND High voltage leakage current
BOOT = OUT = 600 V
11
μA
RDBoot
VCC vs. BOOT
Bootstrap diode on resistance (4)
SD/OD = LIN = 5 V;
HIN = GND = PGND
VCC – BOOT = 0.5 V
140 175
Ω
RONH
High side turn on resistance(2)
I(GH) = 1 mA (source)
77
ROFFH
High side turn off resistance(2)
I(GH) = 1 mA (sink)
2
MASTERGAN2
Electrical characteristics
DS13597 - Rev 2.0
page 6/29



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