MASTERGAN2 datasheet(8/29 Pages) STMICROELECTRONICS

部件名	MASTERGAN2

功能描述	High power density 600V Half bridge driver with two enhancement mode GaN HEMT

PDF	29 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4.2

GaN power transistor

Table 6. GaN power transistor electrical characteristics

VGS = 6 V; TJ = 25°C, unless otherwise specified

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

GaN on/off states

V(BR)DS

Drain-source blocking voltage

Low side IDSS < 18 µA (1)

High side IDSS < 13.3 µA(1)

VGS = 0 V

650

IDSS_LS

Zero gate voltage drain current - low side

VDS = 600 V

VGS = 0 V

0.7

µA

IDSS_HS

Zero gate voltage drain current - high side

VDS = 600 V

VGS = 0 V

0.5

µA

VGS(th)

Gate threshold voltage

VDS = VGS

Low side, ID = 2.5 mA (1)

High side, ID = 1.7 mA (1)

1.7

IGS_LS

Gate to source current - Low side

VDS = 0 V (2)

µA

IGS_HS

Gate to source current - High side

VDS = 0 V(2)

µA

RDS(on)_LS

Static drain-source on-resistance - Low side

ID = 3.2 A

TJ = 25°C

150

220

mΩ

TJ = 125°C (2)

330

RDS(on)_HS Static drain-source on-resistance - High side

ID = 2.2 A

TJ = 25°C

225

300

mΩ

TJ = 125°C (2)

495

1. Tested at wafer level.

2. Value estimated by characterization, not tested in production.

MASTERGAN2

GaN power transistor

DS13597 - Rev 2.0

page 8/29

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