ST7L19 datasheet(110/138 Pages) STMICROELECTRONICS

110 / 138 page

ST7L15, ST7L19

110/138

ELECTRICAL CHARACTERISTICS (cont’d)

13.6 MEMORY CHARACTERISTICS

13.6.1 RAM and Hardware Registers

TA = -40 to +125°C, unless otherwise specified.

13.6.2 Flash Program Memory

TA = -40 to +85°C, unless otherwise specified

13.6.3 EEPROM Data Memory

TA = -40 to +125°C, unless otherwise specified

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Up to 32 bytes can be programmed at a time.

3. The data retention time increases when the TA decreases.

4. Data based on reliability test results and monitored in production.

5. Guaranteed by Design. Not tested in production.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode1)

HALT mode (or RESET)

1.6

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash write/erase

Refer to operating range of

VDD with TA, section 13.3.1

on page 100

3.0

5.5

tprog

Programming time for 1~32 bytes2)

TA =−40 to +85°C

Programming time for 1.5 Kbytes

TA = 25°C

0.24

0.48

tRET

Data retention

TA = 55°C

years

NRW

Write erase cycles

TPROG = 25°C

cycles

TPROG = 85°C

300

IDD

Supply current

Read / Write / Erase modes

fCPU = 8 MHz, VDD = 5.5V

2.65)

No Read/No Write Mode

100

µA

Power down mode / HALT

0.1

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for EEPROM write/

erase

Refer to operating range of

VDD with TA, section 13.3.1

on page 100

3.0

5.5

tprog

Programming time for 1~32 bytes

TA =−40 to +125°C

tRET

Data retention with 1k cycling

(TPROG = −40 to +125°C

TA = 55°C

years

Data retention with 10k cycling

(TPROG = −40 to +125°C)

Data retention with 100k cycling

(TPROG = −40 to +125°C)

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