AS4CM4EOQ datasheet(4/16 Pages) ALSC

4 / 16 page

AS4C4M4EOQ

AS4C4M4E1Q

3/22/01; v.1.0

Alliance Semiconductor

P. 4 of 16

Absolute maximum ratings

DC electrical characteristics (AS4C4M4E0/E1)

Parameter

Symbol

Min

Max

Unit

Input voltage

Vin

-1.0

+7.0

Input voltage (DQs)

VDQ

-1.0

VCC + 0.5

Power supply voltage

VCC

-1.0

+7.0

Storage temperature (plastic)

TSTG

-55

+150

°C

Soldering temperature × time

TSOLDER

–260 × 10

oC × sec

Power dissipation

–1

Short circuit output current

Iout

–50

Parameter

Symbol Test conditions

-50

-60

Unit

Notes

Min

Max

Min

Max

Input leakage current

IIL

≤ V

in ≤ +5.5V,

Pins not under test = 0V

-5

µA

Output leakage current IOL

DOUT disabled, 0V ≤ Vout ≤ +5.5V

-5

µA

Operating power

supply current

ICC1

RAS, UCAS, LCAS, Address cycling;

tRC=min

–

110

–

100

1,2

TTL standby power

supply current

ICC2

RAS = UCAS = LCAS

≥ V

–2.0

–

2.0

Average power supply

current, RAS refresh

mode or CBR

ICC3

RAS cycling, UCAS = LCAS

≥ V

IH,

tRC = min of RAS low after XCAS

low.

–

110

–

100

EDO page mode

average power supply

current

ICC4

RAS = VIL, UCAS or LCAS,

address cycling: tHPC = min

–90

–

1, 2

CMOS standby power

supply current

ICC5

RAS = UCAS = LCAS = VCC - 0.2V

–

1.0

–

1.0

Output voltage

VOH

IOUT = -5.0 mA

2.4

–

2.4

–

VOL

IOUT = 4.2 mA

–

0.4

–

0.4

CAS before RAS refresh

current

ICC6

RAS, UCAS or LCAS cycling, tRC =

min

–

110

–

100

Self refresh current

ICC7

RAS = UCAS = LCAS

≤ 0.2V,

WE = OE

≥ V

CC - 0.2V,

all other inputs at 0.2V or

VCC - 0.2V

–0.6

–

0.6

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