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数据搜索系统，热门电子元器件搜索 |
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AS4CM4EOQ 数据表(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS4CM4EOQ 数据表(HTML) 7 Page - Alliance Semiconductor Corporation |
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7 / 16 page  ® AS4C4M4EOQ AS4C4M4E1Q 3/22/01; v.1.0 Alliance Semiconductor P. 7 of 16 Write cycle Read-modify-write cycle Refresh cycle Symbol Parameter -50 -60 Unit Notes Min Max Min Max tWCS Write command setup time 0 – 0 – ns 11 tWCH Write command hold time 10 – 10 – ns 11 tWP Write command pulse width 10 – 10 – ns tRWL Write command to RAS lead time 10 – 10 – ns tCWL Write command to CAS lead time 8 – 10 – ns tDS Data-in setup time 0 – 0 – ns 12 tDH Data-in hold time 8 – 10 – ns 12 Symbol Parameter -50 -60 Unit Notes Min Max Min Max tRWC Read-write cycle time 113 – 135 – ns tRWD RAS to WE delay time 67 – 77 – ns 11 tCWD CAS to WE delay time 32 – 35 – ns 11 tAWD Column address to WE delay time 42 – 47 – ns 11 Symbol Parameter -50 -60 Unit Notes Min Max Min Max tCSR CAS setup time (CAS-before-RAS)5 – 5 – ns 3 tCHR CAS hold time (CAS-before-RAS)8 – 10 – ns 3 tRPC RAS precharge to CAS hold time 0 – 0 – ns tCPT CAS precharge time (CBR counter test) 10 10 – ns |
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