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AS4CM4EOQ 数据表(PDF) 6 Page - Alliance Semiconductor Corporation

部件名 AS4CM4EOQ
功能描述  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ 数据表(HTML) 6 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
®
3/22/01; v.1.0
Alliance Semiconductor
P. 6 of 16
AC parameters common to all waveforms
Read cycle
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRC
Random read or write cycle time
80
100
ns
tRP
RAS precharge time
30
40
ns
tRAS
RAS pulse width
50
10K
60
10K
ns
tCAS
CAS pulse width
8
10K
10
10K
ns
tRCD
RAS to CAS delay time
15
35
15
43
ns
6
tRAD
RAS to column address delay time
12
25
12
30
ns
7
tRSH
CAS to RAS hold time
10
10
ns
tCSH
RAS to CAS hold time
40
50
ns
tCRP
CAS to RAS precharge time
5
5
ns
tASR
Row address setup time
0
0
ns
tRAH
Row address hold time
8
10
ns
tT
Transition time (rise and fall)
1
50
1
50
ns
4,5
tREF
Refresh period
32/64
32/64
ms
17/16
tCP
CAS precharge time
8
10
ns
tRAL
Column address to RAS lead time
25
30
ns
tASC
Column address setup time
0
0
ns
tCAH
Column address hold time
8
10
ns
Symbol Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRAC
Access time from RAS
–50
60
ns
6
tCAC
Access time from CAS
12
15
ns
6,13
tAA
Access time from address
25
30
ns
7,13
tRCS
Read command setup time
0
0
ns
tRCH
Read command hold time to CAS
0–
0–
ns
9
tRRH
Read command hold time to RAS
0–
0–
ns
9



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