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CSTS0200MGA06 数据表(PDF) 18 Page - STMicroelectronics |
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CSTS0200MGA06 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 153 page  ST72334J/N, ST72314J/N, ST72124J 18/153 6 DATA EEPROM 6.1 INTRODUCTION The Electrically Erasable Programmable Read Only Memory can be used as a non volatile back- up for storing data. Using the EEPROM requires a basic access protocol described in this chapter. 6.2 MAIN FEATURES s Up to 16 Bytes programmed in the same cycle s EEPROM mono-voltage (charge pump) s Chained erase and programming cycles s Internal control of the global programming cycle duration s End of programming cycle interrupt flag s WAIT mode management Figure 7. EEPROM Block Diagram EECSR EEPROM INTERRUPT FALLING EDGE HIGH VOLTAGE PUMP IE LAT 0 0 0 0 0 PGM EEPROM RESERVED DETECTOR EEPROM MEMORY MATRIX (1 ROW = 16 x 8 BITS) ADDRESS DECODER DATA MULTIPLEXER 16 x 8 BITS DATA LATCHES ROW DECODER DATA BUS 4 4 4 128 128 ADDRESS BUS |
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