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STR730FZ1T7 数据表(PDF) 35 Page - STMicroelectronics |
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STR730FZ1T7 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 53 page ![]() STR73xF Electrical parameters 35/53 3.3.3 Memory characteristics Flash Memory 1. TA=-45°C after 0 cycles, Guaranteed by characterization, not tested in production 2. All bits programmed to 0. 3. Guaranteed by design, not tested in production. Table 17. Flash memory characteristics Symbol Parameter Test Conditions Value Unit Min Typ Max1) tWP Word Program (32-bit) 35 80 µs tDWP Double Word Program(64-bit) 64 150 µs tBP64 Bank Program (64K) Double Word Program 0.5 1.25 s tBP128 Bank Program (128K) Double Word Program 1 2.5 s tBP256 Bank Program (256K) Double Word Program 2 4.9 s tSE8 Sector Erase (8K) Not preprogrammed Preprogrammed 2) 0.6 0.5 0.9 0.8 s tSE32 Sector Erase (32K) Not preprogrammed Preprogrammed2) 1.1 0.8 2 1.8 s tSE64 Sector Erase (64K) not preprogrammed preprogrammed 2) 1.7 1.3 3.7 3.3 s tRPD 3) Recovery from Power-Down 20 µs tPSL 3) Program Suspend Latency 10 µs tESL 3) Erase Suspend Latency 30 µs tESR 3) Erase Suspend Rate Min time from Erase Resume to next Erase Suspend 20 20 ms tSP 3) Set Protection 40 170 µs tFPW 3) First Word Program 1 ms NEND Endurance 10 kcycles tRET Data Retention TA=85° 20 Years |
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