STR730FZ1T7 datasheet(39/53 Pages) STMICROELECTRONICS

39 / 53 page

STR73xF

Electrical parameters

39/53

3.3.5

I/O port pin characteristics

General Characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified.

Notes:

Data based on characterization results, not tested in production.

When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise

refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is

induced by VIN<VSS. Refer to Section 3.2 on page 23 for more details.

Leakage could be higher than max. if negative current is injected on adjacent pins.

Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of

the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or

technology characteristics, not tested in production.

The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding

IPU and IPD current characteristics described in Figure 19).

Table 21.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage 1)

TTL ports

0.8

VIH

Input high level voltage 1)

2.0

IINJ(PIN) Injected Current on any I/O pin

±10

ΣIINJ(PIN)

Total injected current (sum of all

I/O and control pins)

±75

Ilkg

Input leakage current 3)

VSS≤VIN≤VDD

±1

µA

Static current consumption 4)

Floating input

mode

200

µA

RPU

Weak pull-up equivalent

resistor5)

VIN=VSS

120

220

Ω

RPD

Weak pull-down equivalent

resistor5)

VIN=VDD

120

220

Ω

CIO

I/O pin capacitance

STR730FZ1T7 数据表(PDF) 39 Page - STMicroelectronics

STR730FZ1T7 数据表(HTML) 39 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

数据表下载