Nexperia

PUSB3AB2DF

Extremely low clamping low capacitance ESD protection

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

-

6.6

-

V

IRM

reverse leakage current VRWM = 4 V; Tamb = 25 °C

-

1

50

nA

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

0.26

-

pF

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

-

0.23

-

pF

VCL

clamping voltage

ITLP = 4 A; Tamb = 25 °C

[1]

-

3.7

-

V

IR = 5 A; Tamb = 25 °C

[1]

-

0.3

-

Ω

Rdyn

dynamic resistance

IR = -5 A; Tamb = 25 °C

[1]

-

0.3

-

Ω

f-3dB

-3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation

at 1 MHz

-

11.8

-

GHz

[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.

aaa-030292

-4

-2

0

S21

(dB)

-6

f (Hz)

108

1011

1010

109

Fig. 3. Insertion loss; typical values

VI (V)

-4

4

2

-2

0

aaa-030293

0.4

0.8

1.2

a

0

Fig. 4. Relative capacitance as a function of input

voltage; typical values

PUSB3AB2DF

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© Nexperia B.V. 2019. All rights reserved

Product data sheet

22 November 2019

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